Feedback Mechanism for High Power RF Power Amplifiers
Tech ID: 22676 / UC Case 2012-063-0
Background
Technology Description
Presented here is a new type of microwave power amplifier that can get higher output power and efficiency than state-of-the-art microwave power amplifiers implemented in monolithic silicon processes. This invention takes advantage of a feedback network to optimize the power handling of a transistor. Feedback is normally avoided in power amplifiers because it limits the gain and hurts the amplifier efficiency. In this invention, the feedback is shown to keep the transistor delivering the peak power over a broader range of input power levels. Consequently, higher efficiency is also reached.
Patent Status
| Country | Type | Number | Dated | Case |
| United States Of America | Issued Patent | 9,160,286 | 10/13/2015 | 2012-063 |
Other Information
A Nested Reactive Feedback Power Amplifier for Q-band Operation
Contact
- University of California, San Diego Office of Innovation and Commercialization
- innovation@ucsd.edu
- tel: View Phone Number.
